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| PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1200HA-50H q IC................................................................ 1200A q VCES ....................................................... 2500V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 570.25 190 171 570.25 570.25 6 - M8 NUTS 20 E E C C C C 40 1240.25 140 G C CM E E E C E G CIRCUIT DIAGRAM 20.25 41.25 3 - M4 NUTS 79.4 8 - 7MOUNTING HOLES 61.5 13 61.5 5.2 15 40 38 28 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LABEL 30 Mar. 2001 PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C, IGBT part Conditions Ratings 2500 20 1200 2400 1200 2400 10400 -40 ~ +150 -40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 120mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 1200A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 1250V, IC = 1200A, VGE = 15V VCC = 1250V, IC = 1200A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A die / dt = -2400A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.20 3.60 120 13.2 4.0 5.4 -- -- -- -- 2.90 -- 250 -- -- 0.006 Max 15 7.5 0.5 4.16 -- -- -- -- -- 1.60 2.00 2.50 1.00 3.77 1.20 -- 0.012 0.024 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2001 PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 25C VGE = 12V 2400 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V 2000 1600 1200 800 400 0 COLLECTOR CURRENT IC (A) 2000 VGE = 13V VGE = 14V 1600 VGE = 15V VGE = 20V 1200 800 VGE = 11V VGE = 10V VGE = 9V 400 0 VGE = 8V VGE = 7V 10 8 COLLECTOR CURRENT IC (A) Tj = 25C Tj = 125C 0 4 8 12 16 20 0 2 4 6 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V 4 10 Tj = 25C 8 IC = 2400A 6 IC = 1200A 4 3 2 1 Tj = 25C Tj = 125C 0 400 800 1200 1600 2000 2400 2 IC = 480A 0 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj = 25C CAPACITANCE VS. VCE (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VGE = 0V, Tj = 25C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies Coes Cres 1 2 3 4 5 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Mar. 2001 PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HA-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 3 2 td(off) 100 7 5 3 2 10-1 7 5 td(on) tr tf VCC = 1250V, VGE = 15V RG = 2.5, Tj = 125C Inductive load 5 7 102 23 5 7 103 23 5 REVERSE RECOVERY TIME trr (s) 100 7 5 3 2 10-1 7 5 trr Irr 103 7 5 3 2 102 7 5 5 7 102 23 5 7 103 23 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 101 7 Single Pulse 5 TC = 25C 3 Rth(j - c) = 0.024K/W 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) 101 7 Single Pulse 5 TC = 25C 3 Rth(j - c) = 0.012K/W 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) VGE - GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 1250V IC = 1200A 16 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) Mar. 2001 REVERSE RECOVERY CURRENT Irr (A) SWITCHING TIMES (s) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1250V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 2.5 2 |
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